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STTH6002C Datasheet(PDF) 4 Page - STMicroelectronics |
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STTH6002C Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 9 page Characteristics STTH6002C 4/9 Figure 3. Relative variation of thermal impedance junction to case versus pulse duration Figure 4. Junction capacitance versus reverse applied voltage (typical values) 0.1 1.0 1.E-03 1.E-02 1.E-01 1.E+00 Z th(j-c)/Rth(j-c) Single pulse tp(s) 100 1000 1 10 100 1000 C(pF) F=1MHz V osc=30mVRMS T j=25°C VR(V) Figure 5. Reverse recovery charges versus dIF/dt (typical values) Figure 6. Reverse recovery time versus dIF/dt (typical values) 0 50 100 150 200 250 300 350 10 100 1000 Q RR(nC) I F= 30 A V R=160V T j=125 °C T j=25 °C dIF/dt(A/µs) 0 10 20 30 40 50 60 70 80 90 100 10 100 1000 t RR(ns) I F= 30A V R=160V T j=125 °C T j=25 °C dIF/dt(A/µs) Figure 7. Peak reverse recovery current versus dIF/dt (typical values) Figure 8. Dynamic parameters versus junction temperature 0 2 4 6 8 10 12 14 16 10 100 1000 I RM(A) I F= 30A V R=160V T j=125 °C T j=25 °C dIF/dt(A/µs) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 150 Q RR;IRM [Tj]/ QRR;IRM [Tj=125°C] I RM Q RR I F=30A V R=160V Tj(°C) |
Similar Part No. - STTH6002C_06 |
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Similar Description - STTH6002C_06 |
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