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STTH8R06 Datasheet(PDF) 5 Page - STMicroelectronics |
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STTH8R06 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 12 page STTH8R06 Characteristics 5/12 Figure 11. Forward recovery time versus dIF/dt (typical values) Figure 12. Junction capacitance versus reverse voltage applied (typical values) Figure 13. Thermal resistance junction to ambient versus copper surface under tab (epoxy FR4, eCU = 35 µm) (D2PAK) 0 20 40 60 80 100 120 140 160 0 100 200 300 400 500 t (ns) fr dI /dt(A/µs) F I=I T =125°C FF(AV) j V =1.1 x V max. FR F 10 100 1 10 100 1000 C(pF) V (V) R F=1MHz V =30mV T =25°C OSC RMS j 0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 35 40 S(Cu)(cm²) R (°C/W) th(j-a) |
Similar Part No. - STTH8R06_08 |
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Similar Description - STTH8R06_08 |
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