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VNQ860SP-E Datasheet(PDF) 3 Page - STMicroelectronics |
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VNQ860SP-E Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 19 page VNQ860-E, VNQ860SP-E Maximum rating 3/19 1 Maximum rating Table 1. Absolute maximum rating Symbol Parameter Value Unit SO-20 PowerSO-10 VCC DC supply voltage 41 V -VCC Reverse DC supply voltage -0.3 V -IGND DC reverse ground pin -200 mA IOUT DC output current Internally limited A -IOUT Reverse DC output current -2 A IIN DC input current ± 10 mA VIN Input voltage range -3/+VCC V ISTAT DC status voltage + VCC V VESD Electrostatic discharge (R = 1.5 kW; C = 100 pF) 2000 V Ptot Power dissipation at Tc <= 25 °C 16 90 W TJ Junction operating temperature Internally limited °C Tc Case operating temperature -40 to 150 °C Tstg Storage temperature -55 to 150 °C Table 2. Thermal data Symbol Parameter Value Unit SO-20 PowerSO-10 RthJP Thermal resistance junction-pins Max 8 - °C/W RthJA Thermal resistance junction-ambient Max 58 52 (1) 1. When mounted on FR4 printed circuit board with 0.5 cm2 of copper area ( at least 35 µ thick ) connected to all VCC pins. °C/W 37 (2) 2. When mounted on FR4 printed circuit board with 6 cm2 of copper area ( at least 35 µ thick ) connected to all VCC pins. RthJC Thermal resistance junction-case Max - 1.4 °C/W |
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