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JS48F4400P0VB00 Datasheet(PDF) 6 Page - Numonyx B.V

Part # JS48F4400P0VB00
Description  Numonyx StrataFlash Embedded Memory
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Manufacturer  NUMONYX [Numonyx B.V]
Direct Link  http://www.numonyx.com
Logo NUMONYX - Numonyx B.V

JS48F4400P0VB00 Datasheet(HTML) 6 Page - Numonyx B.V

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P30
Datasheet
November 2007
6
Order Number: 306666-11
1.0
Introduction
This document provides information about the Numonyx™ StrataFlash® Embedded
Memory (P30) product and describes its features, operation, and specifications.
The Numonyx™ StrataFlash® Embedded Memory (P30) product is the latest generation
of Numonyx™ StrataFlash® memory devices. Offered in 64-Mbit up through 512-Mbit
densities, the P30 device brings reliable, two-bit-per-cell storage technology to the
embedded flash market segment. Benefits include more density in less space, high-
speed interface, lowest cost-per-bit NOR device, and support for code and data
storage. Features include high-performance synchronous-burst read mode, fast
asynchronous access times, low power, flexible security options, and three industry
standard package choices. The P30 product family is manufactured using Intel* 130 nm
ETOX™ VIII process technology.
The P30 product family is also planned on the Intel* 65nm process lithography. 65nm
AC timing changes are noted in this datasheet, and should be taken into account for all
new designs.
1.1
Nomenclature
1.2
Acronyms
1.8 V:
VCC (core) voltage range of 1.7 V – 2.0 V
3.0 V:
VCCQ (I/O) voltage range of 1.7 V – 3.6 V
9.0 V:
VPP voltage range of 8.5 V – 9.5 V
Block:
A group of bits, bytes, or words within the flash memory array that erase simultaneously
when the Erase command is issued to the device. The P30 has two block sizes: 32-KByte
and 128-KByte.
Main block:
An array block that is usually used to store code and/or data. Main blocks are larger than
parameter blocks.
Parameter block:
An array block that is usually used to store frequently changing data or small system
parameters that traditionally would be stored in EEPROM.
Top parameter device:
A device with its parameter blocks located at the highest physical address of its memory
map.
Bottom parameter device:
A device with its parameter blocks located at the lowest physical address of its memory
map.
BEFP:
Buffer Enhanced Factory Programming
CUI:
Command User Interface
MLC:
Multi-Level Cell
OTP:
One-Time Programmable
PLR:
Protection Lock Register
PR:
Protection Register
RCR:
Read Configuration Register


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