HV7370 datasheet(3/7 Pages) SIRECTIFIER

Part #	HV7370

Description	Quad, High Speed, 짹100V 850mA, Ultrasound Damper

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Manufacturer	SIRECTIFIER [Sirectifier Semiconductors]

Direct Link	http://www.sirectifier.com

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HV7370

Operating Supply Voltages and Current (4 Channel Active)

(Operating conditions, unless otherwise speciﬁed, V

SS = 0V,VLL = +3.3V,VDD = VDN = +9V, VDP = -9V, VPP - VPF = +9V, VNN - VNF = -9V, VSUB = +75V VPP/VNN = ±75V, TA = 25°C)

Sym

Parameter

Min

Typ

Max

Units Conditions

V

LL

Logic voltage reference

1.8

3.3

5.0

V

---

V

DD

Internal voltage supply1

5.0

8.0 to 11

12

V

---

V

DP

P-Gate driver supply

-12

-V

DD

-5.0

V

Negative voltage supply

V

DN

N-Gate drive supply

5.0

V

DD

12

V

Positive voltage supply

V

SUB

IC substrate voltage

5.0

V

DD

100

V

---

RGND RTZ-Ground voltage

-2.0

0

+2.0

V

---

I

LL

V

LL Current EN = Low

-

35

120

µA

---

I

DDQ

V

DD Current EN = Low

-

10

-

µA

---

I

DDEN

V

DD Current EN = High

-

1.5

3.0

mA

f = 0MHz

I

DDEN

V

DD Current

-

6.0

-

mA

f = 5.0MHz, continuous, no loads

I

DPQ

V

DP Current EN = Low

-

50

-

µA

f = 0MHz

I

DPEN

V

DP Current

-

30

-

mA

f = 5.0MHz, continuous, no loads

I

DNQ

V

DN Current EN = Low

-

50

-

µA

f = 0MHz

I

DNEN

V

DN Current

-

12

-

mA

f = 5.0MHz, continuous, no loads

Note:

1. P&N-FETs best matching when V

DD = VDN = +10V, VPN = -10V

Under Voltage

Sym

Parameter

Min

Typ

Max

Units Conditions

V

UVDD

V

DD threshold

2.0

3.7

7.0

V

---

V

UVLL

V

LL threshold

1.0

1.25

1.5

V

---

V

UVVDN

UV threshold for V

DN

3.5

4.25

4.75

V

---

V

UVVDP

UV threshold for V

DP

1.75

4.5

6.0

V

Typ V

UVVDP ≤ -(VDN/2), [VDN = +9.0V]

Electrical Characteristics

(Operating conditions, unless otherwise speciﬁed, V

SS = 0V,VLL = +3.3V,VDD = VDN = +9V, VDP = -9V, VPP - VPF = +9V, VNN - VNF = -9V, VSUB = +75V, VPP/VNN = ±75V, TA = 25°C)

Output P-Channel MOSFET, PDx

Sym

Parameter

Min

Typ

Max

Units Conditions

I

OUT

Output saturation current

0.6

0.85

-

A

---

R

ON

Channel resistance

-

13

-

Ω

I

SD = 100mA

C

OSS

Output capacitance

-

50

-

pF

V

SUB = 25V, f = 1.0MHz

Output N-Channel MOSFET, NDx

I

OUT

Output saturation current

0.6

0.85

-

A

---

R

ON

Channel resistance

-

12.5

-

Ω

I

DS = 100mA

C

OSS

Output capacitance

-

20

-

pF

V

SUB = 25V, f = 1.0MHz

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