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11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

BV

V

GS(th)

I

D(ON)

(max)

(max)

(min)

TO-92

350V

15Ω

1.8V

0.15A

VN3515L

400V

12Ω

1.8V

0.15A

VN4012L

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a

vertical DMOS structure and Supertex's well-proven silicon-gate

manufacturing process. This combination produces devices with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS structures, these

devices are free from thermal runaway and thermally-induced

secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

Ordering Information

Order Number / Package

VN3515L

VN4012L

Applications

❏ Motor controls

❏ Converters

❏ Amplifiers

❏ Telecom Switching

❏ Power supply circuits

❏ Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

N-Channel Enhancement-Mode

Vertical DMOS FETs

Package Option

Note: See Package Outline section for dimensions.

TO-92

Features

❏ Free from secondary breakdown

❏ Low power drive requirement

❏ Ease of paralleling

❏ Low C

❏ Excellent thermal stability

❏ Integral Source-Drain diode

❏ High input impedance and high gain

❏ Complementary N- and P-channel devices

Absolute Maximum Ratings

Drain-to-Source Voltage

BV

DSS

Drain-to-Gate Voltage

BV

DGS

Gate-to-Source Voltage

± 20V

Operating and Storage Temperature

-55°C to +150°C

Soldering Temperature*

300°C

* Distance of 1.6 mm from case for 10 seconds.

S G D