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STN1NC60 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STN1NC60
Description  N-CHANNEL 600V - 12ohm - 0.3A - SOT-223 PowerMesh?줚I MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STN1NC60 Datasheet(HTML) 1 Page - STMicroelectronics

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February 2001
STN1NC60
N-CHANNEL 600V - 12
Ω - 0.3A - SOT-223
PowerMesh™II MOSFET
s
TYPICAL RDS(on) = 12Ω
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
NEW HIGH VOLTAGE BENCHMARK
s
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
™II is the evolution of the first
generation of MESH OVERLAY
™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s
AC ADAPTORS AND BATTERY CHARGERS
s
SWITH MODE POWER SUPPLIES (SMPS)
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
TYPE
VDSS
RDS(on)
ID
STN1NC60
600 V
<15
Ω
0.3 A
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
600
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
600
V
VGS
Gate- source Voltage
±30
V
ID
Drain Current (continuos) at TC = 25°C
0.3
A
ID
Drain Current (continuos) at TC = 100°C
0.18
A
IDM
(1)
Drain Current (pulsed)
1.2
A
PTOT
Total Dissipation at TC = 25°C
2.5
W
Derating Factor
0.02
W/°C
dv/dt
Peak Diode Recovery voltage slope
3
V/ns
Tstg
Storage Temperature
–60 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C
(1)ISD ≤0.3A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1
2
2
3
SOT-223
INTERNAL SCHEMATIC DIAGRAM


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