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74V1G03 Datasheet(PDF) 1 Page - STMicroelectronics |
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74V1G03 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 9 page 1/9 April 2004 s HIGH SPEED: tPD = 3.9ns (TYP.) at VCC =5V s LOW POWER DISSIPATION: ICC =1µA(MAX.) at TA=25°C s HIGH NOISE IMMUNITY: VNIH =VNIL = 28% VCC (MIN.) s POWER DOWN PROTECTION ON INPUTS s OPERATING VOLTAGE RANGE: VCC(OPR) = 2V to 5.5V s IMPROVED LATCH-UP IMMUNITY DESCRIPTION The 74V1G03 is an advanced high-speed CMOS SINGLE 2-INPUT OPEN DRAIN NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. The device can, with an external pull-up resistor, be used in wired AND configuration. This device can also be used as a led driver in any other application requiring current sink. Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V. 74V1G03 SINGLE 2-INPUT OPEN DRAIN NAND GATE PIN CONNECTION AND IEC LOGIC SYMBOLS ORDER CODES PACKAGE T & R SOT23-5L 74V1G03STR SOT323-5L 74V1G03CTR SOT323-5L SOT23-5L |
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Similar Description - 74V1G03 |
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