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BTW67-1200RG Datasheet(PDF) 1 Page - STMicroelectronics

Part # BTW67-1200RG
Description  50A SCRS
Download  6 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BTW67-1200RG Datasheet(HTML) 1 Page - STMicroelectronics

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Table 1: Main Features
DESCRIPTION
Available in high power packages, the BTW67 /
BTW69 Series is suitable in applications where
power handling and power dissipation are critical,
such as solid state relays, welding equipment,
high power motor control.
Based on a clip assembly technology, they offer a
superior performance in surge current handling
capabilities.
Thanks to their internal ceramic pad, they provide
high voltage insulation (2500VRMS), complying
with UL standards (file ref: E81734).
Symbol
Value
Unit
IT(RMS)
50
A
VDRM/VRRM
600 to 1200
V
IGT
80
mA
BTW67 and BTW69 Series
50A SCRS
REV. 5
February 2006
STANDARD
Table 2: Order Codes
Part Numbers
Marking
BTW67-xxx
BTW67xxx
BTW69-xxxRG
BTW69xxx
A
K
G
K
A
G
A
K
G
RD91
(BTW67)
TOP3 Ins.
(BTW69)
Table 3: Absolute Ratings (limiting values)
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current
(180° conduction angle)
RD91
Tc = 70°C
50
A
TOP3 Ins.
Tc = 75°C
IT(AV)
Average on-state current
(180° conduction angle)
RD91
Tc = 70°C
32
A
TOP3 Ins.
Tc = 75°C
ITSM
Non repetitive surge peak on-state current
tp = 8.3 ms
Tj = 25°C
610
A
tp = 10 ms
580
I²tI²t Value for fusing
Tj = 25°C
1680
A2S
dI/dt
Critical rate of rise of on-state current IG = 2
x IGT , tr ≤ 100 ns
F = 60 Hz
Tj = 125°C
50
A/µs
IGM
Peak gate current
tp = 20 µs
Tj = 125°C
8A
PG(AV)
Average gate power dissipation
Tj = 125°C
1W
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
VRGM
Maximum peak reverse gate voltage
5
V


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