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DVIULC6-2M6 Datasheet(PDF) 9 Page - STMicroelectronics

Part # DVIULC6-2M6
Description  Ultra low capacitance ESD protection
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

DVIULC6-2M6 Datasheet(HTML) 9 Page - STMicroelectronics

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Important
An important precaution to take is to put the protection device as close as possible to the
disturbance source (generally the connector).
3.3
Crosstalk behavior
Figure 22.
Crosstalk phenomena
The crosstalk phenomena is due to the coupling between 2 lines. The coupling factor (
β12 or
β21) increases when the gap across lines decreases, particularly in silicon dice. In the
example above the expected signal on load RL2 is α2VG2, in fact the real voltage at this point
has got an extra value
β21VG1. This part of the VG1 signal represents the effect of the
crosstalk phenomenon of the line 1 on the line 2. This phenomenon has to be taken into
account when the drivers impose fast digital data or high frequency analog signals in the
disturbing line. The perturbed line will be more affected if it works with low voltage signal or
high load impedance (few k
Ω).
Figure 20.
Remaining voltage after the
DVIULC6-2P6 during
positive ESD surge
Figure 21.
Remaining voltage after the
DVIULC6-26 during
negative ESD surge
10V/Div
100ns/Div
10V/Div
100ns/Div
Line 1
Line 2
VG1
VG2
RG1
RG2
DRIVERS
RL1
RL2
RECEIVERS
α
β
+
1
12
VG1
VG2
α
β
+
2
21
VG2
VG1


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