STP11NM60FP datasheet(2/12 Pages) STMICROELECTRONICS

Part #	STP11NM60FP

Description	N-CHANNEL 600V - 0.4ohm-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh?줡ower MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1

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THERMAL DATA

AVALANCHE CHARACTERISTICS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

ON (1)

DYNAMIC

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%

VDSS.

TO-220/D2PAK/I2PAK

TO-220FP

Rthj-case

Thermal Resistance Junction-case

Max

0.78

3.57

°C/W

Rthj-amb

Thermal Resistance Junction-ambient

Max

62.5

°C/W

Tl

Maximum Lead Temperature For Soldering Purpose

300

°C

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

5.5

A

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID =IAR,VDD =50 V)

350

mJ

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

600

V

IDSS

Zero Gate Voltage

Drain Current (VGS =0)

VDS = Max Rating

1µA

VDS = Max Rating, TC = 125 °C

10

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS = ±30V

±100

nA

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage

VDS =VGS,ID = 250µA

34

5

V

RDS(on)

Static Drain-source On

Resistance

VGS =10V, ID = 5.5A

0.4

0.45

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VDS >ID(on) xRDS(on)max,

ID = 5.5A

5.2

S

Ciss

Input Capacitance

VDS = 25V,f= 1MHz,VGS =0

1000

pF

Coss

Output Capacitance

230

pF

Crss

Reverse Transfer

Capacitance

25

pF

Coss eq. (2)

Equivalent Output

Capacitance

VGS =0V, VDS = 0V to 480V

100

pF

RG

Gate Input Resistance

f=1 MHz Gate DC Bias = 0

Test Signal Level = 20mV

Open Drain

1.6

Ω

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