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STP11NM60FP Datasheet(PDF) 2 Page - STMicroelectronics |
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STP11NM60FP Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 12 page STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1 2/12 THERMAL DATA AVALANCHE CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF ON (1) DYNAMIC 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. TO-220/D2PAK/I2PAK TO-220FP Rthj-case Thermal Resistance Junction-case Max 0.78 3.57 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 5.5 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID =IAR,VDD =50 V) 350 mJ Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 600 V IDSS Zero Gate Voltage Drain Current (VGS =0) VDS = Max Rating 1µA VDS = Max Rating, TC = 125 °C 10 µA IGSS Gate-body Leakage Current (VDS =0) VGS = ±30V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS =VGS,ID = 250µA 34 5 V RDS(on) Static Drain-source On Resistance VGS =10V, ID = 5.5A 0.4 0.45 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS >ID(on) xRDS(on)max, ID = 5.5A 5.2 S Ciss Input Capacitance VDS = 25V,f= 1MHz,VGS =0 1000 pF Coss Output Capacitance 230 pF Crss Reverse Transfer Capacitance 25 pF Coss eq. (2) Equivalent Output Capacitance VGS =0V, VDS = 0V to 480V 100 pF RG Gate Input Resistance f=1 MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain 1.6 Ω |
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