STB11NM60-1 datasheet(3/12 Pages) STMICROELECTRONICS

Part #	STB11NM60-1

Description	N-CHANNEL 600V - 0.4ohm-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh?줡ower MOSFET

Download	12 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

Logo

3 / 12 page

3/12

STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay Time

VDD = 300V, ID = 5.5A

RG = 4.7Ω VGS =10V

(see test circuit, Figure 3)

20

ns

tr

Rise Time

20

ns

Qg

Total Gate Charge

VDD = 400V, ID =11A,

VGS =10V

30

nC

Qgs

Gate-Source Charge

10

nC

Qgd

Gate-Drain Charge

15

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

tr(Voff)

Off-voltage Rise Time

VDD =400V, ID = 11A,

RG = 4.7Ω, VGS =10V

(see test circuit, Figure 5)

6ns

tf

Fall Time

11

ns

tc

Cross-over Time

19

ns

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain Current

11

A

ISDM (2)

Source-drain Current (pulsed)

44

A

VSD (1)

Forward On Voltage

ISD =11A, VGS =0

1.5

V

trr

Qrr

Irrm

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 11A, di/dt = 100A/µs,

VDD = 100 V, Tj = 25°C

(see test circuit, Figure 5)

390

3.8

19.5

ns

µC

A

trr

Qrr

Irrm

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 11A, di/dt = 100A/µs,

VDD = 100 V, Tj = 150°C

(see test circuit, Figure 5)

570

5.7

20

ns

µC

A

Safe Operating Area for TO-220/D2PAK/I2PAK

Safe Operating Area for TO-220FP

Similar Part No. - STB11NM60-1

Manufacturer	Part #	Datasheet	Description
STMicroelectronics	STB11NM60-1	364Kb / 16P	N-channel 650V TJmax - 0.4OHM - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET
Inchange Semiconductor ...	STB11NM60-1	356Kb / 2P	isc N-Channel Mosfet Transistor

More results

Similar Description - STB11NM60-1

Manufacturer	Part #	Datasheet	Description
STMicroelectronics	STP11NM60A	367Kb / 11P	N-CHANNEL 600V - 0.4ohm - 11A TO-220/TO-220FP/I2PAK MDmesh?줡ower MOSFET
	STP11NM60	364Kb / 16P	N-channel 650V TJmax - 0.4OHM - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET
	STP6NK60Z	578Kb / 13P	N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET April 2003
	STP22NM60	386Kb / 11P	N-CHANNEL 600V - 0.19 ohm - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh?줡ower MOSFET
	STP22NM50	356Kb / 10P	N-CHANNEL 500V - 0.16ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?줡ower MOSFET
	STB11NM60FD	495Kb / 17P	N-channel 600V - 0.40OHM - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh TM Power MOSFET (with fast diode)
	STP7NK80Z	588Kb / 13P	N-CHANNEL800V-1.5ohm - 5.2A TO-220/TO-220FP/I2PAK/D2PAK Zener-Protected SuperMESH?줡ower MOSFET
	STP8NM50	329Kb / 9P	N-CHANNEL 500V - 0.7ohm - 8A TO-220/TO-220FP MDmesh?줡ower MOSFET
	STP20NM60	355Kb / 15P	N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET
	STP9NK60Z	581Kb / 13P	N-CHANNEL 600V - 0.85ohm - 7A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET June 2002

More results

STB11NM60-1 Datasheet(PDF) 3 Page - STMicroelectronics

STB11NM60-1 Datasheet(HTML) 3 Page - STMicroelectronics

Similar Part No. - STB11NM60-1

Similar Description - STB11NM60-1

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Download

Link URL