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STP16NE06 Datasheet(PDF) 1 Page - STMicroelectronics |
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STP16NE06 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 9 page STP16NE06 STP16NE06FP N - CHANNEL 60V - 0.08 Ω - 16A - TO-220/TO-220FP STripFET ™ POWER MOSFET PRELIMINARY DATA s TYPICAL RDS(on) = 0.08 Ω s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s 175 oC OPERATING TEMPERATURE s HIGH dV/dt CAPABILITY s APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalance characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION ® INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP16NE06 STP16NE06FP VDS Drain-source Voltage (VGS = 0) 60 V VDGR Drain- gate Voltage (RGS = 20 k Ω) 60 V VGS Gate-source Voltage ± 20 V ID Drain Current (continuous) at Tc = 25 o C16 11 A ID Drain Current (continuous) at Tc = 100 oC10 7 A IDM( •) Drain Current (pulsed) 64 64 A Ptot Total Dissipation at Tc = 25 oC60 30 W Derating Factor 0.4 0.2 W/ oC VISO Insulation Withstand Voltage (DC) 2000 V dV/dt Peak Diode Recovery voltage slope 6 V/ns Tstg Storage Temperature -65 to 175 oC Tj Max. Operating Junction Temperature 175 oC ( •) Pulse width limited by safe operating area (1) ISD ≤ 16 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX ’ New RDS (on) spec. starting from JULY 98 TYPE VDSS RDS(on) ID STP16NE06 STP16NE06FP 60 V 60 V < 0.100 Ω < 0.100 Ω 16 A 11 A June 1998 TO-220 TO-220FP 1 2 3 1 2 3 1/9 |
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