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VN16BSP Datasheet(PDF) 6 Page - STMicroelectronics |
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VN16BSP Datasheet(HTML) 6 Page - STMicroelectronics |
6 / 11 page VN16BSP 6/11 Figure 7. Switching Time Waveforms FUNCTIONAL DESCRIPTION The device has a diagnostic output which indicates open load in on-state, open load in off- state, over temperature conditions and stuck-on to VCC. From the falling edge of the input signal, the status output, initially low to signal a fault condition (overtemperature or open load on-state), will go back to a high state with a different delay in case of overtemperature (tpovl) and in case of open load (tpol) respectively. This feature allows to discriminate the nature of the detected fault. To protect the device against short circuit and over current condition, the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 °C. When this temperature returns to 125°C the switch is automatically turned on again. In short circuit the protection reacts with virtually no delay, the sensor being located inside the Power MOS area. An internal function of the devices ensures the fast demagnetization of inductive loads with a typical voltage (Vdemag) of - 18V. This function allows to greatly reduces the power dissipation according to the formula: Pdem = 0.5 • Lload • (Iload) 2 • [(VCC+Vdemag)/ Vdemag] • f where f = switching frequency and Vdemag = demagnetization voltage The maximum inductance which causes the chip temperature to reach the shut-down temperature in a specified thermal environment is a function of the load current for a fixed VCC, Vdemag and f according to the above formula. In this device if the GND pin is disconnected, with VCC not exceeding 16V, it will switch off. PROTECTING THE DEVICE AGAINST REVERSE BATTERY The simplest way to protect the device against a continuous reverse battery voltage (-26V) is to insert a Schottky diode between pin 1 (GND) and ground, as shown in the typical application circuit (Figure 10). The consequences of the voltage drop across this diode are as follows: – If the input is pulled to power GND, a negative voltage of -Vf is seen by the device. (VIL, VIH thresholds and VSTAT are increased by Vf with respect to power GND). – The undervoltage shutdown level is increa- sed by Vf. If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to node [1] (see application circuit in Figure 10), which becomes the common signal GND for the whole control board avoiding shift of VIH, VIL and VSTAT. This solution allows the use of a standard diode. |
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