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VND5050AK-E Datasheet(PDF) 8 Page - STMicroelectronics |
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VND5050AK-E Datasheet(HTML) 8 Page - STMicroelectronics |
8 / 38 page Electrical specifications VND5050AJ-E / VND5050AK-E 8/38 2.2 Thermal data VESD Electrostatic discharge (Human Body Model: R=1.5K Ω; C=100pF) – INPUT – CURRENT SENSE –CS_DIS –OUTPUT –VCC 4000 2000 4000 5000 5000 V V V V V VESD Charge device model (CDM-AEC-Q100-011) 750 V Tj Junction operating temperature -40 to 150 °C Tstg Storage temperature -55 to 150 °C Table 3. Absolute maximum ratings (continued) Symbol Parameter Value Unit Table 4. Thermal data Symbol Parameter Value Unit PowerSSO-12 PowerSSO-24 Rthj-case Thermal resistance junction-case (Max.) (with one channel ON) 2.7 2.7 °C/W Rthj-amb Thermal resistance junction-ambient (Max.) See Figure 29 See Figure 33 °C/W |
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