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M48Z512BV-85PM1 Datasheet(PDF) 9 Page - STMicroelectronics

Part # M48Z512BV-85PM1
Description  3.3 V, 4 Mbit (512 K x 8 bit) ZEROPOWER SRAM
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M48Z512BV-85PM1 Datasheet(HTML) 9 Page - STMicroelectronics

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M48Z512BV
Operating modes
9/20
2.2
WRITE mode
The M48Z512BV is in the WRITE mode whenever W and E are active. The start of a WRITE
is referenced from the latter occurring falling edge of W or E. A WRITE is terminated by the
earlier rising edge of W or E.
The addresses must be held valid throughout the cycle. E or W must return high for a
minimum of tEHAX from E or tWHAX from W prior to the initiation of another READ or WRITE
cycle. Data-in must be valid tDVEH or tDVWH prior to the end of WRITE and remain valid for
tEHDX or tWHDX afterward. G should be kept high during WRITE cycles to avoid bus
contention; although, if the output bus has been activated by a low on E and G, a low on W
will disable the outputs tWLQZ after W falls.
Table 3.
READ mode AC characteristics
Symbol
Parameter(1)
1.
Valid for ambient operating temperature: TA = 0 to 70°C; VCC = 3.0 to 3.6 V (except where noted).
Min
Max
Unit
tAVAV
READ cycle time
85
ns
tAVQV
Address valid to output valid
85
ns
tELQV
Chip enable low to output valid
85
ns
tGLQV
Output enable low to output valid
45
ns
tELQX
(2)
2.
CL = 5 pF.
Chip enable low to output transition
5
ns
tGLQX
(2)
Output enable low to output transition
5
ns
tEHQZ
(2)
Chip enable high to output Hi-Z
35
ns
tGHQZ
(2)
Output enable high to output Hi-Z
25
ns
tAXQX
Address transition to output transition
5
ns


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