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STP30NE03LFP Datasheet(PDF) 3 Page - STMicroelectronics

Part # STP30NE03LFP
Description  N - CHANNEL 30V - 0.028 ohm - 30A TO-220/TO-220FP STripFET POWER MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP30NE03LFP Datasheet(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay T ime
Rise Time
VDD =15 V
ID =14 A
RG =4.7
Ω
VGS =5 V
(Resistive Load, see fig. 3)
19
110
ns
ns
Qg
Q gs
Qgd
Tot al G ate Charge
Gat e-Source Charge
Gat e-Drain Charge
VDD =48 V ID =30 A VGS =5 V
20
8
10
28
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay T ime
Fall T ime
VDD =15 V
ID =14 A
RG =4.7
Ω
VGS =5 V
(Resistive Load, see fig. 3)
40
20
ns
ns
tr(Voff)
tf
tc
Off -volt age Rise T ime
Fall T ime
Cross-over Time
VDD =24 V
I D =28 A
RG =4.7
Ω
VGS =5 V
(Induct ive Load, see fig. 5)
20
38
65
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
ISD
ISDM (
•)
Source-drain Current
Source-drain Current
(pulsed)
30
120
A
A
VSD (
∗)Forward On Voltage
ISD =30 A
VGS =0
1. 5
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 28 A
di/dt = 100 A/
µs
VDD =20 V
Tj =150
oC
(see t est circuit, f ig. 5)
30
30
2
ns
nC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
STP30NE03L/FP
3/9


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