Specifications ispLSI 2128VE

4

Switching Test Conditions

Figure 2. Test Load

Input Pulse Levels

Table 2 - 0003/2128VE

Input Rise and Fall Time

Input Timing Reference Levels

Output Timing Reference Levels

Output Load

GND to 3.0V

≤ 1.5ns 10% to 90%

1.5V

1.5V

See Figure 2

3-state levels are measured 0.5V from steady-state active level.

DC Electrical Characteristics

Over Recommended Operating Conditions

Output Load Conditions (see Figure 2)

TEST CONDITION

R1

R2

CL

A

316Ω

348Ω

35pF

B

∞

348Ω

35pF

316Ω

348Ω

35pF

Active High

Active Low

C

316Ω

348Ω

5pF

∞

348Ω

5pF

Active Low to Z

at V +0.5V

OL

Active High to Z

at V

-0.5V

OH

Table 2-0004/2128VE

SYMBOL

1. One output at a time for a maximum duration of one second. V

= 0.5V was selected to avoid test

problems by tester ground degradation. Characterized but not 100% tested.

2. Measured using eight 16-bit counters.

3. Typical values are at V = 3.3V and T = 25°C.

4. Maximum I

varies widely with specific device configuration and operating frequency. Refer to the Power Consumption

section of this data sheet and Thermal Management section of the Lattice Semiconductor Data Book or CD-ROM to

estimate maximum I

.

Table 2-0007/2128VE

1

PARAMETER

2, 4

Output Low Voltage

Output High Voltage

Input or I/O High Leakage Current

Input or I/O Low Leakage Current

BSCAN Input Low Leakage Current

I/O Active Pull-Up Current

Output Short Circuit Current

Operating Power Supply Current

I = 8 mA

I

= -4 mA

0V ≤ V ≤ V (Max.)

0V ≤ V ≤ V

0V ≤ V ≤ V

V = 3.3V, V

= 0.5V

V = 0.0V, V = 3.0V

f

= 1 MHz

OL

OH

IN

IL

IN

IL

IN

IL

CC

OUT

CLOCK

IL

IH

CONDITION

MIN.

TYP.

MAX.

UNITS

3

–

2.4

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

195

0.4

–

10

10

-10

-150

-150

-100

–

V

V

µA

µA

µA

µA

µA

mA

mA

CC

A

OUT

CC

CC

(V

- 0.2)V ≤ V ≤ V

V ≤ V ≤ 5.25V

CC

CC

IN

IN

CC

+ 3.3V

R1

R2

Device

Output

Test

Point

0213A/2128VE