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ISPLSI3256E100LB320 Datasheet(PDF) 4 Page - Lattice Semiconductor |
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ISPLSI3256E100LB320 Datasheet(HTML) 4 Page - Lattice Semiconductor |
4 / 15 page Specifications ispLSI 3256E 4 Absolute Maximum Ratings 1 Supply Voltage Vcc ........................................................................... -0.5 to +7.0V Input Voltage Applied ........................................................................ -2.5 to VCC +1.0V Off-State Output Voltage Applied ..................................................... -2.5 to VCC +1.0V Storage Temperature ........................................................................ -65 to 150°C Case Temp. with Power Applied ...................................................... -55 to 125°C Max. Junction Temp. (TJ) with Power Applied (304-Pin PQFP) ...... 150°C Max. Junction Temp. (TJ) with Power Applied (320-Ball BGA) ........ 140°C 1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional operation of the device at these or at any other conditions above those indicated in the operational sections of this specification is not implied (while programming, follow the programming specifications). DC Recommended Operating Condition Capacitance (T A=25°C,f=1.0 MHz) SYMBOL Table 2-0006/3256E C PARAMETER Clock Capacitance 15 UNITS TYPICAL TEST CONDITIONS 2 pf V = 5.0V, V = 2.0V CC Y C I/O Capacitance 10 1 pf V = 5.0V, V = 2.0V CC I/O Data Retention Specifications Table 2-0008/3256E PARAMETER Data Retention MINIMUM MAXIMUM UNITS ispLSI Erase/Reprogram Cycles 20 10000 – – Years Cycles TA SYMBOL Table 2-0005/3256E VCC VIH VIL PARAMETER Ambient Temperature Supply Voltage Input High Voltage Input Low Voltage MIN. MAX. UNITS 0 4.75 2.0 0 70 5.25 V +1 0.8 °C V V V CC |
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