K4S561632C-L1H datasheet(9/11 Pages) SAMSUNG

Part #	K4S561632C-L1H

Description	256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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9 / 11 page

K4S561632C

CMOS SDRAM

Rev. 0.4 Sept. 2001

IOH Characteristics (Pull-up)

Voltage

100MHz

133MHz

Min

100MHz

133MHz

Max

66MHz

Min

(V)

I (mA)

3.45

-2.4

3.3

-27.3

3.0

0.0

-74.1

-0.7

2.6

-21.1

-129.2

-7.5

2.4

-34.1

-153.3

-13.3

2.0

-58.7

-197.0

-27.5

1.8

-67.3

-226.2

-35.5

1.65

-73.0

-248.0

-41.1

1.5

-77.9

-269.7

-47.9

1.4

-80.8

-284.3

-52.4

1.0

-88.6

-344.5

-72.5

0.0

-93.0

-502.4

-93.0

IBIS SPECIFICATION

IOL Characteristics (Pull-down)

Voltage

100MHz

133MHz

Min

100MHz

133MHz

Max

66MHz

Min

(V)

I (mA)

0.0

0.4

27.5

70.2

17.7

0.65

41.8

107.5

26.9

0.85

51.6

133.8

33.3

1.0

58.0

151.2

37.6

1.4

70.7

187.7

46.6

1.5

72.9

194.4

48.0

1.65

75.4

202.5

49.5

1.8

77.0

208.6

50.7

1.95

77.6

212.0

51.5

3.0

80.3

219.6

54.2

3.45

81.4

222.6

54.9

0

-100

-200

-300

-400

-500

-600

0

3

0.5

1

1.5

2

2.5

3.5

Voltage

250

200

150

100

50

0

3

0.5

1

1.5

2

2.5

3.5

Voltage

66MHz and 100MHz/133MHz Pull-up

66MHz and 100MHz/133MHz Pull-down

IOH Min (100MHz/133MHz)

IOH Max (100MHz/133MHz)

IOH Min (66MHz)

IOH Min (100MHz/133MHz)

IOH Max (100MHz/133MHz)

IOH Min (66MHz)

Similar Part No. - K4S561632C-L1H

Manufacturer	Part #	Datasheet	Description
Samsung semiconductor	K4S561632A	127Kb / 10P	256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
	K4S561632A-TC/L1H	127Kb / 10P	256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
	K4S561632A-TC/L1L	127Kb / 10P	256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
	K4S561632A-TC/L75	127Kb / 10P	256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
	K4S561632A-TC/L80	127Kb / 10P	256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL

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Similar Description - K4S561632C-L1H

Manufacturer	Part #	Datasheet	Description
Samsung semiconductor	K4S561632D-TC75000	64Kb / 11P	256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
	K4S561632B	131Kb / 11P	256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
	K4S561632D	60Kb / 11P	256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
	K4S561632A	127Kb / 10P	256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
Hynix Semiconductor	HY57V561620B	165Kb / 12P	4 Banks x 4M x 16Bit Synchronous DRAM
Hynix Semiconductor	HY57V561620C	217Kb / 12P	4 Banks x 4M x 16Bit Synchronous DRAM
Winbond	W982516AH	1Mb / 41P	4M x 4 BANKS x 16BIT SDRAM
Samsung semiconductor	K4S560432B	130Kb / 11P	256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL
	K4S560832A	126Kb / 10P	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
	K4S560832C	113Kb / 11P	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL

More results

K4S561632C-L1H Datasheet(PDF) 9 Page - Samsung semiconductor

K4S561632C-L1H Datasheet(HTML) 9 Page - Samsung semiconductor

Similar Part No. - K4S561632C-L1H

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