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FGH20N60SFD Datasheet(PDF) 5 Page - Fairchild Semiconductor

Part # FGH20N60SFD
Description  600V, 20A Field Stop IGBT
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FGH20N60SFD Datasheet(HTML) 5 Page - Fairchild Semiconductor

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FGH20N60SFD Rev. A
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
Figure 8. Saturation Voltage vs. VGE
Figure 9. Capacitance Characteristics
Figure 10. Gate charge Characteristics
Figure 11. SOA Characteristics
Figure 12. Turn-on Characteristics vs.
Gate Resistance
0
4
8
121620
0
4
8
12
16
20
IC = 10A
20A
40A
Common Emitter
T
C = 25
o
C
Gate-Emitter Voltage, VGE [V]
0
4
8
121620
0
4
8
12
16
20
40A
IC = 10A
20A
Common Emitter
TC = 125
o
C
Gate-Emitter Voltage, VGE [V]
0.1
1
10
0
500
1000
1500
2000
2500
Common Emitter
VGE = 0V, f = 1MHz
TC = 25
o
C
C
res
C
oes
C
ies
Collector-Emitter Voltage, VCE [V]
30
020
40
60
80
0
3
6
9
12
15
Common Emitter
TC = 25
o
C
300V
200V
V
CC = 100V
Gate Charge, Qg [nC]
1
10
100
1000
0.01
0.1
1
10
100
Single Nonrepetitive
Pulse TC = 25
oC
Curves must be derated
linearly with increase
in temperature
1ms
10 ms
DC
10µs
100µs
Collector-Emitter Voltage, VCE [V]
0
10
2030405060
5
10
100
Common Emitter
VCC = 400V, VGE = 15V
IC = 20A
TC = 25
o
C
TC = 125
o
C
t
d(on)
t
r
Gate Resistance, RG [Ω]


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