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FAN7383M Datasheet(PDF) 5 Page - Fairchild Semiconductor

Part # FAN7383M
Description  Half-Bridge Gate-Drive IC
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FAN7383M Datasheet(HTML) 5 Page - Fairchild Semiconductor

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© 2006 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN7383 Rev. 1.0.3
5
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In
addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. TA = 25°C unless otherwise specified.
Notes:
2. When mounted on 76.2 x 114.3 x 1.6mm PCB. (FR-4 glass epoxy material).
3. Please refer to:
JESD51-2: Integral circuits thermal test method environmental conditions - Natural convection
JESD51-3: Low effective thermal conductivity test board for leaded surface mount packages
4. Do not exceed PD under any circumstances.
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to Absolute Maximum Ratings.
Symbol
Parameter
Min.
Max.
Unit
VS
High-side offset voltage
VB-25
VB+0.3
V
VB
High-side floating supply voltage
-0.3
625
V
VHO
High-side floating output voltage HO1, HO2
VS-0.3
VB+0.3
V
VDD
Low-side and logic fixed supply voltage
-0.3
25
V
VLO
Low-side output voltage LO1, LO2
-0.3
VDD+0.3
V
VIN
Logic input voltage (IN)
-0.3
VDD+0.3
V
VSD
Shutdown logic input voltage
-0.3
VDD+0.3
V
VDT
Dead-time control voltage
-0.3
5.0
V
GND
Logic ground
VDD-25
VDD+0.3
V
dVS/dt
Allowable offset voltage slew rate
50
V/ns
PD
(2)(3)(4)
Power dissipation
1.0
W
θ
JA
Thermal resistance, junction-to-ambient
110
°C/W
TJ
Junction temperature
150
°C
TSTG
Storage temperature
150
°C
Symbol
Parameter
Condition
Min.
Max.
Unit
VB
High-side floating supply voltage
VS+15
VS+20
V
VS
High-side floating supply offset voltage
6-VDD
600
V
VDD
Low-side supply voltage
15
20
V
VHO
High-side (HO) output voltage
VS
VB
V
VLO
Low-side (LO) output voltage
GND
VDD
V
VIN
Logic input voltage (IN)
GND
VDD
V
TA
Ambient temperature
-40
125
°C


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