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STP80NF10FP Datasheet(PDF) 1 Page - STMicroelectronics |
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STP80NF10FP Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 9 page 1/9 September 2002 STP80NF10 STP80NF10FP N-CHANNEL 100V - 0.012 Ω - 80A TO-220/TO-220FP LOW GATE CHARGE STripFET™II POWER MOSFET (1) ISD ≤80A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (2) Starting Tj = 25°C, ID = 80A, VDD = 50V s TYPICAL RDS(on) = 0.012Ω s EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED s APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power MOSFET series realized with STMicro- electronics unique STripFET process has specifical- ly been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements. APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS (q) Pulse width limited by safe operating area (*) Limited by Package TYPE VDSS RDS(on) ID STP80NF10 STP80NF10FP 100 V 100 V < 0.015 Ω < 0.015 Ω 80 A 38 A Symbol Parameter Value Unit STP80NF10 STP80NF10FP VDS Drain-source Voltage (VGS = 0) 100 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 100 V VGS Gate- source Voltage ±20 V ID(*) Drain Current (continuous) at TC = 25°C 80 38 A ID Drain Current (continuous) at TC = 100°C 66 27 A IDM (l) Drain Current (pulsed) 320 152 A PTOT Total Dissipation at TC = 25°C 300 45 W Derating Factor 2 0.3 W/°C dv/dt (1) Peak Diode Recovery voltage slope 9 V/ns EAS (2) Single Pulse Avalanche Energy 360 mJ VISO Insulation Withstand Voltage (DC) - 2500 V Tstg Storage Temperature – 55 to 175 °C Tj Max. Operating Junction Temperature TO-220 1 2 3 1 2 3 TO-220FP INTERNAL SCHEMATIC DIAGRAM |
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