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FDMS8674 Datasheet(PDF) 4 Page - Fairchild Semiconductor |
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FDMS8674 Datasheet(HTML) 4 Page - Fairchild Semiconductor |
4 / 7 page www.fairchildsemi.com 4 ©2008 Fairchild Semiconductor Corporation FDMS8674 Rev.C1 Figure 7. 0 4 8 12 16 202428 0 2 4 6 8 10 ID = 17A VDD = 15V VDD = 10V Qg, GATE CHARGE(nC) VDD = 20V Gate Charge Characteristics Figure 8. 0.1 1 10 100 1000 30 f = 1MHz VGS = 0V VDS, DRAIN TO SOURCE VOLTAGE (V) Crss Coss Ciss 3000 50 Capacitance vs Drain to Source Voltage Figure9. 0.01 0.1 1 10 100 1 10 TJ = 25oC TJ = 125oC t AV, TIME IN AVALANCHE(ms) 30 300 Unclamped Inductive Switching Capability Figure 10. 25 50 75 100 125 150 0 20 40 60 80 100 RθJC = 1.6 oC/W VGS = 10V VGS = 4.5V T C , CASE TEMPERATURE ( o C ) Limited by Package Maximum Continuous Drain Current vs Case Temperature Figure 11. Forward Bias Safe Operating Area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 100µs DC 10s 1s 100ms 10ms 1ms VDS, DRAIN to SOURCE VOLTAGE (V) THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE TJ = MAX RATED RθJA = 125 oC/W TA = 25 oC 300 Figure 12. 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1 10 100 SINGLE PULSE RθJA = 125 oC/W TA = 25 oC 0.5 V GS = 10V t, PULSE WIDTH (s) 500 Single Pulse Maximum Power Dissipation Typical Characteristics T J = 25°C unless otherwise noted |
Similar Part No. - FDMS8674_08 |
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Similar Description - FDMS8674_08 |
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