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STP8NA50 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STP8NA50
Description  N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP8NA50 Datasheet(HTML) 1 Page - STMicroelectronics

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STP8NA50
STP8NA50FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
s
TYPICAL RDS(on) = 0.7
Ω
s
± 30V GATE TO SOURCE VOLTAGE RATING
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
oC
s
LOW INTRINSIC CAPACITANCES
s
GATE GHARGE MINIMIZED
s
REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The
optimized
cell
layout
coupled
with
a
new
proprietary edge termination concur to give the
device low RDS(on) and gate charge, unequalled
ruggedness and superior switching performance.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
TYPE
VDSS
R DS(on)
ID
STP8NA50
STP8NA50FI
500 V
500 V
<0. 85
Ω
<0. 85
Ω
8A
4.5 A
1
2
3
TO-220
ISOWATT220
November 1996
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Unit
STP8NA50
STP8NA50FI
VDS
Drain-source Voltage (VGS =0)
500
V
VDG R
Drain-gate Volt age (RGS =20 k
Ω)500
V
VGS
Gate-source Voltage
± 30
V
ID
Drain Current (cont inuous) at T c =25
oC8
4.5
A
ID
Drain Current (cont inuous) at T c =100
oC5.3
3
A
IDM(
•)
Drain Current (pulsed)
32
32
A
Ptot
Total Dissipation at Tc =25
oC
125
45
W
Derating Factor
1
0.36
W/
oC
VISO
I nsulat ion Withstand Voltage (DC)
2000
V
Tstg
St orage Temperat ure
-65 to 150
oC
Tj
Max. Operat ing Junction Temperature
150
oC
(
•) Pulse width limited by safe operating area
1
2
3
1/10


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