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CNY174SR2VM Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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CNY174SR2VM Datasheet(HTML) 3 Page - Fairchild Semiconductor |
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3 / 10 page  ©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com CYN17XM, CNY17FXM, MOC810XM Rev. 1.0.7 3 Electrical Characteristics (T A = 25°C Unless otherwise specified.) (1) Individual Component Characteristics Isolation Characteristics Transfer Characteristics (TA = 25°C Unless otherwise specified.) (3) *All typicals at TA = 25°C Symbol Parameters Test Conditions Device Min. Typ. Max. Units EMITTER VF Input Forward Voltage IF = 60mA CNY17XM, CNY17FXM 1.0 1.35 1.65 V IF = 10mA MOC810XM 1.0 1.15 1.50 CJ Capacitance VF = 0 V, f = 1.0MHz All 18 pF IR Reverse Leakage Current VR = 6V All 0.001 10 µA DETECTOR BVCEO Breakdown Voltage Collector to Emitter IC = 1.0mA, IF = 0 All 70 100 V BVCBO Collector to Base IC = 10µA, IF = 0 CNY171M/2M/3M/4M 70 120 BVECO Emitter to Collector IE = 100µA, IF = 0 All 7 10 ICEO Leakage Current Collector to Emitter VCE = 10 V, IF = 0 All 1 50 nA ICBO Collector to Base VCB = 10 V, IF = 0 CNY171M/2M/3M/4M 20 nA CCE Capacitance Collector to Emitter VCE = 0, f = 1MHz All 8 pF CCB Collector to Base VCB = 0, f = 1MHz CNY171M/2M/3M/4M 20 pF CEB Emitter to Base VEB = 0, f = 1MHz CNY171M/2M/3M/4M 10 pF Symbol Characteristic Test Conditions Min. Typ.* Max. Units VISO Input-Output Isolation Voltage f = 60 Hz, t = 1 sec., II-O ≤ 2µA (4) 7500 Vac(pk) RISO Isolation Resistance VI-O = 500 VDC (4) 1011 Ω CISO Isolation Capacitance VI-O = Ø, f = 1MHz (4) 0.2 pF Symbol DC Characteristics Test Conditions Min. Typ.* Max. Units COUPLED (CTR)(2) Output Collector Current MOC8106M IF = 10mA, VCE = 10V 50 150 % MOC8107M 100 300 CNY17F1M IF = 10mA, VCE = 5V 40 80 CNY17F2M 63 125 CNY17F3M 100 200 CNY17F4M 160 320 CNY171M 40 80 CNY172M 63 125 CNY173M 100 200 CNY174M 160 320 VCE(sat) Collector-Emitter Saturation Voltage CNY17XM/FXM IC = 2.5mA, IF = 10mA 0.4 V MOC8106M/7M IC = 500µA, IF = 5.0mA |
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