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FJD5555 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FJD5555 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com FJD5555 Rev. A2 1 April 2008 FJD5555 NPN Silicon Transistor High Voltage Switch Mode Application • Fast Speed Switching • Wide Safe Operating Area • Suitable for Electronic Ballast Application Absolute Maximum Ratings * T C=25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics T a=25°C unless otherwise noted * Device mounted on minimum pad size Package Marking and Ordering Information Symbol Parameter Value Units BVCBO Collector-Base Voltage 1050 V BVCEO Collector-Emitter Voltage 400 V BVEBO Emitter-Base Voltage 14 V IC Collector Current (DC) 5 A ICP Collector Current (Pulse) 10 A IB Base Current (DC) 2 A IBP Collector Current (Pulse) 4 A PC Collector Dissipation. 1.34 W TJ Junction Temperature 150 °C TSTG Storage Junction Temperature Range - 55 ~ 150 °C Symbol Parameter Value Units RθJA Thermal Resistance, Junction to Ambient 95 °C/W Part Number Marking Package Packing Method Remarks FJD5555TM J5555 D-PAK Tape & Reel 1. Base 2. Collector 3. Emitter 1 DPAK Marking : J5555 |
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