© 2007 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FJP5555 Rev. 1.0.0

1

March 2008

FJP5555

NPN Silicon Transistor

High Voltage Switch Mode Application

• Fast Speed Switching

• Wide Safe Operating Area

• Suitable for Electronic Ballast Application

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Ordering Information

Symbol

Parameter

Value

Units

Collector-Base Voltage

1050

V

Collector-Emitter Voltage

400

V

Emitter-Base Voltage

14

V

Collector Current (DC)

5

A

Collector Current (Pulse)

10

A

Collector Dissipation.

85

W

Junction Temperature

150

°C

Storage Junction Temperature Range

- 55 ~ 150

°C

Part Number

Marking

Package

Packing Method

Remarks

FJP5555TU

J5555

TO220

TUBE

TO-220

1

1.Base

2.Collector

3.Emitter