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FP7G75US60 Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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FP7G75US60 Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 10 page 3 www.fairchildsemi.com FP7G75US60 Rev. A Electrical Characteristics (T J = 25°C, Unless Otherwise Specified) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVCES Collector-Emitter Breakdown Voltage VGE= 0V, IC = 250µA 600 - - V ∆BV CES/ ∆T J Temperature Coeff. of Breakdown Voltage VGE= 0V, IC = 1mA - 0.6 - V ICES Collector Cut-off Current VCE= VCES, VGE= 0V - - 250 uA IGES Gate-Emitter Leakage Current VGE= VGES, VCE= 0V - - ± 100 nA On Characteristics VGE(th) G-E Threshold Voltage VGE = 0V, IC=75mA 5.0 6.0 8.5 V VCE(sat) Collector to Emitter Saturation Voltage IC = 75A, VGE = 15V -2.2 2.8 V Dynamic Characteristics Cies Input Capacitance VCE = 30V, VGE = 0V, f = 1MHz - 4515 - pF Coes Output Capacitance - 550 -- pF Cres Reverse Capacitance - 100 - pF Switching Characteristics td(on) Turn-On Delay Time VCC = 300 V, IC = 75A, RG = 3.3Ω, VGE = 15V Inductive Load, TC = 25°C -33- ns tr Rise Time -29- ns td(off) Turn-Off Delay Time - 92 - ns tf Fall Time -91- ns Eon Turn-On Switching Loss - 0.75 - mJ Eoff Turn-Off Switching Loss - 0.72 - mJ Ets Total Switching Loss - 1.47 - mJ td(on) Turn-On Delay Time VCC = 300 V, IC = 75A, RG = 3.3Ω, VGE = 15V Inductive Load, TC = 125°C -27- ns tr Rise Time -22- ns td(off) Turn-Off Delay Time - 96 - ns tf Fall Time - 197 - ns Eon Turn-On Switching Loss - 0.73 - mJ Eoff Turn-Off Switching Loss - 1.47 - mJ Ets Total Switching Loss - 2.2 - mJ Tsc Short Circuit Withstand Time VCC = 300 V, VGE = 15V @ TC = 100°C10 - - us Qg Total Gate Charge VCE = 300 V, IC = 75A, VGE = 15V - 205 - nC Qge Gate-Emitter Charge - 40 - nC Qgc Gate-Collector Charge - 115 - nC |
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