KSC5502TU datasheet(2/8 Pages) FAIRCHILD

Part #	KSC5502TU

Description	NPN Planar Silicon Transistor

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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KSC5502 Rev. A1

2

Electrical Characteristics * T

C=25°C unless otherwise noted

* Pulse Test : Pulse Width = 5ms, Duty Cycle

≤ 10%

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

BVCBO

Collector-Base Breakdown Voltage

IC=1mA, IE=0

1200

1350

V

BVCEO

Collector-Emitter Breakdown Voltage

IC=5mA, IB=0

600

750

V

BVEBO

Emitter-Base Breakdown Voltage

IE=500µA, IC=0

12

13.2

V

ICES

Collector Cut-off Current

VCES=1200V, VBE=0

TC=25°C

100

µA

TC=125°C

500

ICEO

Collector Cut-off Current

VCE=600V, IB=0

TC=25°C

100

µA

TC=125°C

500

IEBO

Emitter Cut-off Current

VEB=12V, IC=0

TC=25°C

10

µA

hFE

DC Current Gain

VCE=1V, IC=0.2A

TC=25°C

15

28

40

TC=125°C

8

27

VCE=1V, IC=1A

TC=25°C

4

8.7

TC=125°C

3

6.6

VCE=2.5V, IC=0.5A

TC=25°C

12

20

30

TC=125°C

6

16

VCE(sat)

Collector-Emitter Saturation Voltage

IC=0.2A, IB=0.02A

TC=25°C

0.09

0.8

V

TC=125°C

0.13

1.1

V

IC=0.4A, IB=0.08A

TC=25°C

0.08

0.6

V

TC=125°C

0.12

1.0

V

IC=1A, IB=0.2A

TC=25°C

0.19

1.5

V

TC=125°C

0.35

3.0

V

VBE(sat)

Base-Emitter Saturation Voltage

IC=0.4A, IB=0.08A

TC=25°C

0.77

1.0

V

TC=125°C

0.65

0.9

V

IC=1A, IB=0.2A

TC=25°C

0.83

1.2

V

TC=125°C

0.70

1.0

V

Cib

Input Capacitance

VEB=8V, IC=0, f=1MHz

410

500

pF

Cob

Output Capacitance

VCB=10V, IE=0, f=1MHz

20

100

pF

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