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FDA20N50_0707 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDA20N50_0707 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page ©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDA20N50 / FDA20N50_F109 Rev. B1 July 2007 UniFET TM FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET Features • 22A, 500V, RDS(on) = 0.23Ω @VGS = 10 V • Low gate charge ( typical 45.6 nC) •Low Crss ( typical 27 pF) •Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. Absolute Maximum Ratings Thermal Characteristics D G S GS D TO-3P FDA Series Symbol Parameter FDA20N50 Unit VDSS Drain-Source Voltage 500 V ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) 22 13.2 A A IDM Drain Current - Pulsed (Note 1) 88 A VGSS Gate-Source voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 1110 mJ IAR Avalanche Current (Note 1) 22 A EAR Repetitive Avalanche Energy (Note 1) 28.0 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) - Derate above 25 °C 280 2.3 W W/ °C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 °C Symbol Parameter Min. Max. Unit RθJC Thermal Resistance, Junction-to-Case -- 0.44 °C/W RθCS Thermal Resistance, Case-to-Sink 0.24 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W * Drain current limited by maximum junction termperature. |
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