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FDJ1032C Datasheet(PDF) 5 Page - Fairchild Semiconductor |
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FDJ1032C Datasheet(HTML) 5 Page - Fairchild Semiconductor |
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5 / 9 page  5 www.fairchildsemi.com FDJ1032C Rev. B 2(W) Typical Characteristics : Q1 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 Q g, GATE CHARGE (nC) I D = -2.8A V DS = -5V -10V -15V 0 100 200 300 400 500 05 10 15 20 -V DS, DRAIN TO SOURCE VOLTAGE (V) C ISS C OSS C RSS f = 1 MHz V GS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) DC 1s 100ms 100 µs R DS(ON) LIMIT V GS = -4.5V SINGLE PULSE RθJA = 140 oC/W T A = 25 oC 10ms 1ms 10s 0 2 4 6 8 10 0.001 0.01 0.1 1 10 100 1000 t 1, TIME (sec) SINGLE PULSE RθJA = 140°C/W T A = 25°C Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. |
Similar Part No. - FDJ1032C |
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Similar Description - FDJ1032C |
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