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FQA46N15 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FQA46N15 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 9 page 2 www.fairchildsemi.com FQA46N15 / FQA46N15_F109 Rev. A1 Package Marking and Ordering Information Electrical Characteristics T C = 25°C unless otherwise noted NOTES: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.43mH, IAS =50A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 45.6A, di/dt ≤300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Device Marking Device Package Reel Size Tape Width Quantity FQA46N15 FQA46N15 TO-3P -- -- 30 FQA46N15 FQA46N15_F109 TO-3PN -- -- 30 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 150 -- -- V ∆BVDSS/ ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.16 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 150 V, VGS = 0 V -- -- 1 µA VDS = 120 V, TC = 150°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 25A -- 0.033 0.042 Ω gFS Forward Transconductance VDS = 40 V, ID = 25A (Note 4) -- 36 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 2500 3250 pF Coss Output Capacitance -- 520 670 pF Crss Reverse Transfer Capacitance -- 100 130 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 75 V, ID = 45.6A, RG = 25 Ω (Note 4, 5) -- 35 80 ns tr Turn-On Rise Time -- 320 650 ns td(off) Turn-Off Delay Time -- 210 430 ns tf Turn-Off Fall Time -- 200 410 ns Qg Total Gate Charge VDS = 120 V, ID = 45.6A, VGS = 10 V (Note 4, 5) -- 85 110 nC Qgs Gate-Source Charge -- 15 -- nC Qgd Gate-Drain Charge -- 41 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 50 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 200 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS =50A -- -- 1.5 V trr Reverse Recovery Time VGS = 0 V, IS = 45.6 A, dIF / dt = 100 A/µs (Note 4) -- 130 -- ns Qrr Reverse Recovery Charge -- 0.55 -- µC |
Similar Part No. - FQA46N15_07 |
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Similar Description - FQA46N15_07 |
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