FDP15N65_0704 datasheet(3/10 Pages) FAIRCHILD

Part #	FDP15N65_0704

Description	650V N-Channel MOSFET

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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FDP15N65 / FDPF15N65 Rev. B

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage

Variation vs. Source Current

and Temperatue

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

24

68

10

12

10

0

10

1

150

oC

25

oC

-55

oC

* Notes :

1. V

DS = 40V

2. 250μs Pulse Test

V

GS, Gate-Source Voltage [V]

10

-1

10

0

10

1

10

-1

10

0

10

1

V

GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

Bottom : 5.5 V

* Notes :

1. 250μs Pulse Test

2. T

C = 25

oC

V

DS, Drain-Source Voltage [V]

0

1020

3040

50

0.0

0.2

0.4

0.6

0.8

1.0

V

GS = 20V

V

GS = 10V

* Note : T

J = 25

oC

I

D, Drain Current [A]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

10

0

10

1

150

oC

* Notes :

1. V

GS = 0V

2. 250μs Pulse Test

25

oC

V

SD, Source-Drain voltage [V]

0

10

2030

4050

0

2

4

6

8

10

12

V

DS = 325V

V

DS = 130V

V

DS = 520V

* Note : I

D = 15A

Q

G, Total Gate Charge [nC]

10

-1

10

0

10

1

0

1000

2000

3000

4000

5000

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

* Note ;

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

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