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FDP16N50_0704 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDP16N50_0704 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 10 page  2 www.fairchildsemi.com FDP16N50 / FDPF16N50 Rev. B Package Marking and Ordering Information Electrical Characteristics T C = 25°C unless otherwise noted NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 5.5mH, IAS = 16A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 16A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics Device Marking Device Package Reel Size Tape Width Quantity FDP16N50 FDP16N50 TO-220 - - 50 FDPF16N50 FDPF16N50 TO-220F - - 50 Symbol Parameter Conditions Min. Typ. Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA 500 -- -- V ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250μA, Referenced to 25°C -- 0.5 -- V/ °C IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V VDS = 400V, TC = 125°C -- -- -- -- 1 10 μA μA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 8A -- 0.31 0.38 Ω gFS Forward Transconductance VDS = 40V, ID = 8A (Note 4) -- 23 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 1495 1945 pF Coss Output Capacitance -- 235 310 pF Crss Reverse Transfer Capacitance -- 20 30 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 250V, ID = 16A RG = 25Ω (Note 4, 5) -- 40 90 ns tr Turn-On Rise Time -- 150 310 ns td(off) Turn-Off Delay Time -- 65 140 ns tf Turn-Off Fall Time -- 80 170 ns Qg Total Gate Charge VDS = 400V, ID = 16A VGS = 10V (Note 4, 5) -- 32 45 nC Qgs Gate-Source Charge -- 8.5 -- nC Qgd Gate-Drain Charge -- 14 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 9.2 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 37 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 16A -- -- 1.4 V trr Reverse Recovery Time VGS = 0V, IS = 16A dIF/dt =100A/μs (Note 4) -- 490 -- ns Qrr Reverse Recovery Charge -- 5.0 -- μC |
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