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ST1S09PU Datasheet(PDF) 7 Page - STMicroelectronics |
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ST1S09PU Datasheet(HTML) 7 Page - STMicroelectronics |
7 / 18 page ST1S09 Electrical characteristics 7/18 Note: 1 Guaranteed by design, but not tested in production. Table 7. Electrical characteristics for ST1S09IPU Refer to Figure 22 application circuit VIN_SW = VIN_A = VINH = 5 V, VO = 1.2 V, C1 = 4.7 µF, C2 = 22 µF, L1 = 2.7 µH, TJ = -30 to 125 °C (unless otherwise specified. Typical values are referred to 25 °C) Symbol Parameter Test conditions Min. Typ. Max. Unit FB Feedback voltage 784 800 816 mV IFB VFB pin bias current 600 nA VI Minimum input voltage IO = 10mA to 2A 2.7 V OVP Over voltage protection threshold VO rising 1.05 VO 1.1 VO V Over voltage protection hysteresis VO falling 5 % IQ Quiescent current VINH > 1.2V, not switching 1.5 2.5 mA VINH < 0.4V, T = - 30°C to 85°C 1 µA IO Output current VI = 2.7 to 5.5V Note 1 2A VINH Inhibit threshold Device ON, VI = 2.7 to 5.5V 1.3 V Device ON, VI = 2.7 to 5V 1.2 Device OFF 0.4 IINH Inhibit pin current 2µA %VO/ΔVI Output line regulation VI = 2.7V to 5.5V, IO = 100mA Note 1 0.16 %VO/ ΔVI %VO/ΔIO Output load regulation IO = 10mA to 2A Note 1 0.2 0.6 %VO/ ΔIO PWMfS PWM switching frequency VFB = 0.65V 1.2 1.5 1.8 MHz DMAX Maximum duty cycle 80 87 % RDSON-N NMOS switch on resistance ISW = 750 mA 0.1 Ω RDSON-P PMOS switch on resistance ISW = 750 mA 0.1 Ω ISWL Switching current limitation Note 1 2.5 2.9 3.5 A ν Efficiency Note 1 IO = 10mA to 100mA, VO = 3.3V 65 % IO = 100mA to 2A, VO = 3.3V 82 87 TSHDN Thermal shutdown 150 °C THYS Thermal shutdown hysteresis 20 °C %VO/ΔIO Load transient response IO = 100mA to 1A, TA = 25°C tR = tF ≥ 200ns, Note 1 -10 +10 %VO %VO/ΔIO Short circuit removal response IO = 10mA to IO = short, TA = 25°C Note 1 -10 +10 %VO |
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