2N3440 datasheet(2/4 Pages) STMICROELECTRONICS

Part #	2N3440

Description	SILICON NPN TRANSISTORS

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

17.5

175

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

for 2N3439

VCB = 360 V

for 2N3440

VCB = 250 V

20

µA

ICEO

Collector Cut-off

Current (IB = 0)

for 2N3439

VCE = 300 V

for 2N3440

VCE = 200 V

20

50

µA

ICEX

Collector Cut-off

Current (VBE = -1.5V)

for 2N3439

VCE = 450 V

for 2N3440

VCE = 300 V

500

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 6 V

20

µA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

IC = 50 mA

for 2N3439

for 2N3440

350

250

V

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 50 mA

IB = 4 mA

0.5

V

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 50 mA

IB = 4 mA

1.3

V

hFE

∗

DC Current Gain

IC = 20 mA

VCE = 10 V

IC = 2 mA

VCE = 10 V for 2N3439

40

30

160

hFE

Small Signal Current

Gain

IC = 5 mA

VCE = 10 V

f = 1KHz

25

fT

Transition frequency

IC = 5 mA

VCE = 10 V

f = 5MHz

15

MHz

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

2N3439 / 2N3440

2/4

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