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MRF6S9125N Datasheet(PDF) 3 Page - Freescale Semiconductor, Inc |
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MRF6S9125N Datasheet(HTML) 3 Page - Freescale Semiconductor, Inc |
3 / 23 page MRF6S9125NR1 MRF6S9125NBR1 3 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 700 mA, Pout = 60 W Avg., 921-960 MHz, EDGE Modulation Power Gain Gps — 20 — dB Drain Efficiency ηD — 40 — % Error Vector Magnitude EVM — 1.8 — % rms Spectral Regrowth at 400 kHz Offset SR1 — -63 — dBc Spectral Regrowth at 600 kHz Offset SR2 — -78 — dBc Typical CW Performances (In Freescale GSM Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 700 mA, Pout = 125 W, 921-960 MHz Power Gain Gps — 19 — dB Drain Efficiency ηD — 62 — % Input Return Loss IRL — -12 — dB Pout @ 1 dB Compression Point, CW (f = 880 MHz) P1dB — 125 — W |
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