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MRF6V2150NR1 Datasheet(PDF) 2 Page - Freescale Semiconductor, Inc |
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MRF6V2150NR1 Datasheet(HTML) 2 Page - Freescale Semiconductor, Inc |
2 / 15 page 2 RF Device Data Freescale Semiconductor MRF6V2150NR1 MRF6V2150NBR1 Table 2. Thermal Characteristics Characteristic Symbol Value (1,2) Unit Thermal Resistance, Junction to Case Case Temperature 80°C, 150 W CW RθJC 0.24 °C/W Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22-A114) 2 (Minimum) Machine Model (per EIA/JESD22-A115) A (Minimum) Charge Device Model (per JESD22-C101) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD 22-A113, IPC/JEDEC J-STD-020 3 260 °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) IDSS — — 2.5 mA Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) IDSS — — 50 μAdc Drain-Source Breakdown Voltage (ID = 75 mA, VGS = 0 Vdc) V(BR)DSS 110 — — Vdc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 10 μAdc On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 400 μAdc) VGS(th) 1 1.62 3 Vdc Gate Quiescent Voltage (VDD = 50 Vdc, ID = 450 mAdc, Measured in Functional Test) VGS(Q) 1.5 2.6 3.5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) — 0.26 — Vdc Dynamic Characteristics Reverse Transfer Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.6 — pF Output Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 93 — pF Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 163 — pF Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 450 mA, Pout = 150 W, f = 220 MHz, CW Power Gain Gps 23.5 25 26.5 dB Drain Efficiency ηD 66 68.3 — % Input Return Loss IRL — -17 -9 dB 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. ATTENTION: The MRF6V2150N and MRF6V2150NB are high power devices and special considerations must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263 (for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to ensure proper mounting of these devices. |
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