MRF6S24140HR3_08 datasheet(5/9 Pages) FREESCALE

Part #	MRF6S24140HR3

Description	RF Power Field Effect Transistors

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Manufacturer	FREESCALE [Freescale Semiconductor, Inc]

Direct Link	http://www.freescale.com

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MRF6S24140HR3 MRF6S24140HSR3

5

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS — 2450 MHz

500

1

0

50

Gps

Pout, OUTPUT POWER (WATTS) CW

Figure 3. Power Gain and Drain Efficiency

versus CW Output Power as a Function of VDD

IDQ = 1200 mA

f = 2450 MHz

VDD = 28 V

100

10

40

30

20

10

11

16

15

14

13

12

ηD

32 V

30 V

32 V

30 V

28 V

1

0

60

Gps

Pout, OUTPUT POWER (WATTS) CW

Figure 4. Power Gain and Drain Efficiency

versus CW Output Power

VDD = 28 V

IDQ = 1200 mA

f = 2450 MHz

100

40

30

20

11.5

14.5

14

13

12

ηD

13.5

12.5

50

10

Gps

Pout, OUTPUT POWER (WATTS) CW

Figure 5. Power Gain and Drain Efficiency versus

CW Output Power as a Function of Total IDQ

VDD = 28 V

f = 2450 MHz

1400 mA

10

15

13

12

11

1

100

10

14

1000 mA

1300 mA

1200 mA

1100 mA

250

107

90

TJ, JUNCTION TEMPERATURE (°C)

Figure 6. MTTF versus Junction Temperature

This above graph displays calculated MTTF in hours when the device

is operated at VDD = 28 Vdc, Pout = 140 W CW, and ηD = 45%.

MTTF calculator available at http://www.freescale.com/rf. Select

Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

106

105

104

110

130

150

170

190

210

230

300

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MRF6S24140HR3 Datasheet(PDF) 5 Page - Freescale Semiconductor, Inc

MRF6S24140HR3 Datasheet(HTML) 5 Page - Freescale Semiconductor, Inc

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