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MRF281SR1 Datasheet(PDF) 2 Page - Freescale Semiconductor, Inc |
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MRF281SR1 Datasheet(HTML) 2 Page - Freescale Semiconductor, Inc |
2 / 8 page 2 RF Device Data Freescale Semiconductor MRF281SR1 MRF281ZR1 Table 3. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 20 μAdc) VGS(th) 2.4 3.2 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 25 mAdc) VGS(q) 3 4.1 5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 0.1 A) VDS(on) 0.18 0.24 0.30 Vdc Dynamic Characteristics Input Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Ciss — 5.5 — pF Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Coss — 3.3 — pF Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Crss — 0.17 — pF Functional Tests (In Freescale Test Fixture) Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Gps 11 12.5 — dB Drain Efficiency (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) η 30 33 — % Input Return Loss (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) IRL — -16 -10 dB Intermodulation Distortion (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) IMD — -31 -29 dBc Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Gps 11 12.5 — dB Drain Efficiency (VDD = 26 Vdc, Pout = 4 W, IDQ = 25 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) η 30 — — % Input Return Loss (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) IRL — -16 -10 dB Intermodulation Distortion (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) IMD — -31 — dBc Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 4 W CW, IDQ = 25 mA, f1 = 2000.0 MHz) Gps 10.5 12 — dB Drain Efficiency (VDD = 26 Vdc, Pout = 4 W CW, IDQ = 25 mA, f1 = 2000.0 MHz) η 40 44 — % |
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