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MRF284LSR1 Datasheet(PDF) 1 Page - Freescale Semiconductor, Inc

Part # MRF284LSR1
Description  RF Power Field Effect Transistors
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Manufacturer  FREESCALE [Freescale Semiconductor, Inc]
Direct Link  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MRF284LSR1 Datasheet(HTML) 1 Page - Freescale Semiconductor, Inc

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MRF284LR1 MRF284LSR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier
applications. To be used in Class A and Class AB for PCN-PCS/cellular radio
and wireless local loop.
• Specified Two-Tone Performance @ 2000 MHz, 26 Volts
Output Power = 30 Watts PEP
Power Gain = 9 dB
Efficiency = 30%
Intermodulation Distortion = -29 dBc
• Typical Single-Tone Performance at 2000 MHz, 26 Volts
Output Power = 30 Watts CW
Power Gain = 9.5 dB
Efficiency = 45%
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts CW
Output Power
Features
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +65
Vdc
Gate-Source Voltage
VGS
±20
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
87.5
0.5
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
2.0
°C/W
Table 3. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
(VGS = 0, ID = 10 μAdc)
V(BR)DSS
65
Vdc
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0)
IDSS
1.0
μAdc
Gate-Source Leakage Current
(VGS = 20 Vdc, VDS = 0)
IGSS
10
μAdc
(continued)
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Document Number: MRF284
Rev. 17, 5/2006
Freescale Semiconductor
Technical Data
MRF284LR1
MRF284LSR1
2000 MHz, 30 W, 26 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B-05, STYLE 1
NI-360
MRF284LR1
CASE 360C-05, STYLE 1
NI-360S
MRF284LSR1
© Freescale Semiconductor, Inc., 2006. All rights reserved.


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