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MRF284LSR1 Datasheet(PDF) 1 Page - Freescale Semiconductor, Inc |
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MRF284LSR1 Datasheet(HTML) 1 Page - Freescale Semiconductor, Inc |
1 / 12 page MRF284LR1 MRF284LSR1 1 RF Device Data Freescale Semiconductor RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in Class A and Class AB for PCN-PCS/cellular radio and wireless local loop. • Specified Two-Tone Performance @ 2000 MHz, 26 Volts Output Power = 30 Watts PEP Power Gain = 9 dB Efficiency = 30% Intermodulation Distortion = -29 dBc • Typical Single-Tone Performance at 2000 MHz, 26 Volts Output Power = 30 Watts CW Power Gain = 9.5 dB Efficiency = 45% • Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts CW Output Power Features • Excellent Thermal Stability • Characterized with Series Equivalent Large-Signal Impedance Parameters • Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage VDSS -0.5, +65 Vdc Gate-Source Voltage VGS ±20 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 87.5 0.5 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Table 2. Thermal Characteristics Characteristic Symbol Value Unit Thermal Resistance, Junction to Case RθJC 2.0 °C/W Table 3. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage (VGS = 0, ID = 10 μAdc) V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0) IDSS — — 1.0 μAdc Gate-Source Leakage Current (VGS = 20 Vdc, VDS = 0) IGSS — — 10 μAdc (continued) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Document Number: MRF284 Rev. 17, 5/2006 Freescale Semiconductor Technical Data MRF284LR1 MRF284LSR1 2000 MHz, 30 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs CASE 360B-05, STYLE 1 NI-360 MRF284LR1 CASE 360C-05, STYLE 1 NI-360S MRF284LSR1 © Freescale Semiconductor, Inc., 2006. All rights reserved. |
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