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MRF21045LR3 Datasheet(PDF) 1 Page - Freescale Semiconductor, Inc

Part # MRF21045LR3
Description  RF Power Field Effect Transistors
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Manufacturer  FREESCALE [Freescale Semiconductor, Inc]
Direct Link  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MRF21045LR3 Datasheet(HTML) 1 Page - Freescale Semiconductor, Inc

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MRF21045LR3 MRF21045LSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for W-CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
• Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 500 mA,
f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz,
Adjacent Channels measured over 3.84 MHz Bandwidth at f1 -5 MHz
and f2 +5 MHz, Distortion Products measured over a 3.84 MHz Bandwidth
at f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability
on CCDF.
Output Power — 10 Watts Avg.
Efficiency — 23.5%
Gain — 15 dB
IM3 — -37.5 dBc
ACPR — -41 dBc
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 45 Watts CW
Output Power
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +65
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
105
0.60
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1)
Unit
Thermal Resistance, Junction to Case
RθJC
1.65
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M2 (Minimum)
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF21045
Rev. 11, 5/2006
Freescale Semiconductor
Technical Data
MRF21045LR3
MRF21045LSR3
2110-2170 MHz, 45 W, 28 V
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465E-04, STYLE 1
NI-400
MRF21045LR3
CASE 465F-04, STYLE 1
NI-400S
MRF21045LSR3
© Freescale Semiconductor, Inc., 2006. All rights reserved.


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