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MRF21045LR3 Datasheet(PDF) 1 Page - Freescale Semiconductor, Inc |
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MRF21045LR3 Datasheet(HTML) 1 Page - Freescale Semiconductor, Inc |
1 / 12 page MRF21045LR3 MRF21045LSR3 1 RF Device Data Freescale Semiconductor RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica- tions. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. • Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 500 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels measured over 3.84 MHz Bandwidth at f1 -5 MHz and f2 +5 MHz, Distortion Products measured over a 3.84 MHz Bandwidth at f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF. Output Power — 10 Watts Avg. Efficiency — 23.5% Gain — 15 dB IM3 — -37.5 dBc ACPR — -41 dBc • Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 45 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large-Signal Impedance Parameters • Low Gold Plating Thickness on Leads, 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage VDSS -0.5, +65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 105 0.60 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Table 2. Thermal Characteristics Characteristic Symbol Value (1) Unit Thermal Resistance, Junction to Case RθJC 1.65 °C/W Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model 1 (Minimum) Machine Model M2 (Minimum) 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. Document Number: MRF21045 Rev. 11, 5/2006 Freescale Semiconductor Technical Data MRF21045LR3 MRF21045LSR3 2110-2170 MHz, 45 W, 28 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 465E-04, STYLE 1 NI-400 MRF21045LR3 CASE 465F-04, STYLE 1 NI-400S MRF21045LSR3 © Freescale Semiconductor, Inc., 2006. All rights reserved. |
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