2

RF Device Data

Freescale Semiconductor

MRF21045LR3 MRF21045LSR3

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

65

—

—

Vdc

Zero Gate Voltage Drain Current

—

—

10

μAdc

Gate-Source Leakage Current

—

—

1

μAdc

On Characteristics (DC)

Gate Threshold Voltage

2

—

4

Vdc

Gate Quiescent Voltage

3

3.9

5

Vdc

Drain-Source On-Voltage

—

0.19

0.21

Vdc

Forward Transconductance

—

3

—

S

Reverse Transfer Capacitance

—

1.8

—

pF

Functional Tests (In Freescale Test Fixture, 50 ohm system) 2-carrier W-CDMA. Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.

Common-Source Amplifier Power Gain

f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)

13.5

15

—

dB

Drain Efficiency

f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)

η

21

23.5

—

%

Third Order Intermodulation Distortion

f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3

measured over 3.84 MHz Bandwidth at f1 -10 MHz and f2 +10 MHz.)

IM3

—

-37.5

-35

dBc

Adjacent Channel Power Ratio

f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR

measured over 3.84 MHz Bandwidth at f1 -5 MHz and f2 +5 MHz.)

ACPR

—

-41

-38

dBc

Input Return Loss

f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)

IRL

—

-12

-9

dB

1. Part is internally matched both on input and output.

(continued)