2

RF Device Data

Freescale Semiconductor

MRF21180R6

Characteristic

Symbol

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

65

—

—

Vdc

Zero Gate Voltage Drain Leakage Current

—

—

10

μAdc

Gate-Source Leakage Current

—

—

1

μAdc

On Characteristics

2

—

4

Vdc

3

3.9

5

Vdc

—

0.18

0.22

Vdc

—

6

—

S

Reverse Transfer Capacitance

—

3.6

—

pF

2-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers. Each carrier has Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.

Common-Source Amplifier Power Gain

f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,

f2 = 2167.5 MHz)

11

12.1

—

dB

Drain Efficiency

f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,

f2 = 2167.5 MHz)

η

19

22

—

%

Third Order Intermodulation Distortion

f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,

f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW @ f1 -10 MHz

and f2 +10 MHz)

IM3

—

-37.5

-35

dBc

Adjacent Channel Power Ratio

f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,

f2 = 2167.5 MHz; ACPR measured over 3.84 MHz BW @ f1 - 5 MHz

and f2 +5 MHz.)

ACPR

—

-41

-39

dBc

Input Return Loss

f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,

f2 = 2167.5 MHz)

IRL

—

-12

-9

dB

1. Each side of device measured separately.

2. Part internally matched both on input and output.

3. Measurement made with device in push-pull configuration.

(continued)