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MRF21180R6 Datasheet(PDF) 2 Page - Freescale Semiconductor, Inc |
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MRF21180R6 Datasheet(HTML) 2 Page - Freescale Semiconductor, Inc |
2 / 12 page 2 RF Device Data Freescale Semiconductor MRF21180R6 Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics (1) Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 μAdc) V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc On Characteristics Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 200 μAdc) VGS(th) 2 — 4 Vdc Gate Quiescent Voltage (3) (VDS = 28 Vdc, ID = 1700 mAdc) VGS(Q) 3 3.9 5 Vdc Drain-Source On-Voltage (1) (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.18 0.22 Vdc Forward Transconductance (1) (VDS = 10 Vdc, ID = 2 Adc) gfs — 6 — S Dynamic Characteristics (1,2) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Crss — 3.6 — pF Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) 2-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers. Each carrier has Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF. Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 1700 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Gps 11 12.1 — dB Drain Efficiency (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 1700 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) η 19 22 — % Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 1700 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW @ f1 -10 MHz and f2 +10 MHz) IM3 — -37.5 -35 dBc Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 1700 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured over 3.84 MHz BW @ f1 - 5 MHz and f2 +5 MHz.) ACPR — -41 -39 dBc Input Return Loss (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 1700 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) IRL — -12 -9 dB 1. Each side of device measured separately. 2. Part internally matched both on input and output. 3. Measurement made with device in push-pull configuration. (continued) |
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