2

RF Device Data

Freescale Semiconductor

MRF6P21190HR6

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22-A114)

1C (Minimum)

Machine Model (per EIA/JESD22-A115)

A (Minimum)

Charge Device Model (per JESD22-C101)

III (Minimum)

Characteristic

Symbol

Min

Typ

Max

Unit

Zero Gate Voltage Drain Leakage Current

—

—

10

μAdc

Zero Gate Voltage Drain Leakage Current

—

—

1

μAdc

Gate-Source Leakage Current

—

—

1

μAdc

On Characteristics

1

2

3

Vdc

2

2.8

4

Vdc

0.1

0.21

0.3

Vdc

—

5.3

—

S

Reverse Transfer Capacitance

—

1.5

—

pF

2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in

3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01%

Probability on CCDF.

Power Gain

14.5

15.5

17.5

dB

Drain Efficiency

25

26.5

—

%

Intermodulation Distortion

IM3

—

-37

-35

dBc

Adjacent Channel Power Ratio

ACPR

—

-40

-38

dBc

Input Return Loss

IRL

—

-15

-9

dB

1. Each side of device measured separately.

2. Part is internally matched both on input and output.

3. Measurements made with device in push-pull configuration.