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STPS30L60CR Datasheet(PDF) 3 Page - STMicroelectronics |
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STPS30L60CR Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 6 page  STPS30L60CW/CT/CG/CR 3/6 0 5 10 15 20 25 30 35 40 45 50 55 60 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 IR(mA) Tj=125°C Tj=25°C Tj=150°C Tj=100°C Tj=75°C Tj=50°C VR(V) Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). 1 10 100 0.1 0.2 0.5 1.0 2.0 C(nF) F=1MHz Tj=25°C VR(V) Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). 1E-4 1E-3 1E-2 1E-1 1E+0 0.0 0.2 0.4 0.6 0.8 1.0 Zth(j-c)/Rth(j-c) tp(s) Single pulse δ = 0.1 δ = 0.2 δ = 0.5 Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration. 1E-3 1E-2 1E-1 1E+0 0 50 100 150 200 250 IM(A) Tc=25°C Tc=125°C Tc=75°C t(s) IM t δ=0.5 Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). 0 0.2 0.4 0.6 0.8 1 1.2 0 25 50 75 100 125 150 T (°C) j P(t ) P (25°C) ARM p ARM Fig. 4: Normalized avalanche power derating versus junction temperature. 0.001 0.01 0.1 0.01 1 0.1 10 100 1000 1 t (µs) p P(t ) P (1µs) ARM p ARM Fig. 3: Normalized avalanche power derating versus pulse duration. |
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