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2SA1188DTZ-E Datasheet(PDF) 2 Page - Renesas Technology Corp |
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2SA1188DTZ-E Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 7 page 2SA1188 Rev.3.00 Aug 10, 2005 page 2 of 6 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –90 — — V IC = –10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO –90 — — V IC = –1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –5 — — V IE = –10 µA, IC = 0 Collector cutoff current ICBO — — –0.1 µA VCB = –70 V, IE = 0 Emitter cutoff current IEBO — — –0.1 µA VEB = –2 V, IC = 0 DC current trnsfer ratio hFE* 1 250 — 800 VCE = –12 V, IC = –2 mA* 2 Collector to emitter saturation voltage VCE(sat) — –0.05 –0.15 V IC = –10 mA, IB = –1 mA* 2 Base to emitter saturation voltage VBE(sat) — –0.7 –1.0 V Gain bandwidth product fT — 130 — MHz VCE = –6 V, IC = –10 mA Collector output capacitance Cob — 3.2 — pF VCB = –10 V, IE = 0, f = 1 MHz Notes: 1. The 2SA1188 is grouped by hFE as follows. 2. Pulse test D E 250 to 500 400 to 800 |
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