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2SB739CTZ-E Datasheet(PDF) 2 Page - Renesas Technology Corp |
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2SB739CTZ-E Datasheet(HTML) 2 Page - Renesas Technology Corp |
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2 / 6 page  2SB739 Rev.2.00 Aug 10, 2005 page 2 of 5 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –20 — — V IC = –10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO –20 — — V IC = –1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –6 — — V IE = –10 µA, IC = 0 Collector cutoff current ICBO — — –2 µA VCB = –16 V, IE = 0 Emitter cutoff current IEBO — — –0.2 µA VEB = –6 V, IC = 0 DC current transfer ratio hFE 160 — 320 VCE = –2 V, IC = –0.1 A Collector to emitter saturation voltage VCE(sat) — — –0.3 V IC = –1 A, IB = –0.1 A Gain bandwidth product fT — 150 — MHz VCE = –2 V, IC = –10 mA Collector output capacitance Cob — 50 — pF VCB = –10 V, IE = 0, f = 1 MHz |
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