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2SB1025 Datasheet(PDF) 2 Page - Renesas Technology Corp |
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2SB1025 Datasheet(HTML) 2 Page - Renesas Technology Corp |
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2 / 6 page  2SB1025 Rev.2.00 Aug 10, 2005 page 2 of 5 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –120 — — V IC = –10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO –80 — — V IC = –1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –5 — — V IE = –10 µA, IC = 0 Collector cutoff current ICBO — — –10 µA VCB = –100 V, IE = 0 DC current transfer ratio hFE1 100 — 200 VCE = –5 V, IC = –150 mA hFE2 30 — — VCE = –5 V, IC = –500 mA (Pulse test) Collector to emitter saturation voltage VCE(sat) — — –1 V IC = –500 mA, IB = –50 mA (Pulse test) Base to emitter voltage VBE — — –0.9 V VCE = –5 V, IC = –150 mA Gain bandwidth product fT — 140 — MHz VCE = –5 V, IC = –150 mA Collector output capacitance Cob — 20 — pF VCB = –10 V, IE = 0, f = 1 MHz |
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